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dc.contributor.authorTaşçıoğlu, İlkeen_US
dc.contributor.authorÖzmen Tüzün, Ö.en_US
dc.contributor.authorŞağban, H. M.en_US
dc.contributor.authorYağlıoğlu, E.en_US
dc.contributor.authorAltındal, Ş.en_US
dc.date.accessioned2019-07-22T07:06:59Z
dc.date.available2019-07-22T07:06:59Z
dc.date.issued2017en_US
dc.identifier.citationTascioglu, I., Ozmen, O. T., Sagban, H. M., Yaglioglu, E., & Altindal, S. (2017). Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode. Journal of Electronic Materials, 46(4), 2379-2386. doi:10.1007/s11664-017-5294-2en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.urihttps://hdl.handle.net/20.500.12294/1559
dc.descriptionTaşçıoğlu, İlke (Arel Author)en_US
dc.description.abstractIn this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements in the frequency range of 10 kHz-2 MHz. The C-V-f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states (N (ss)). The values of N (ss) located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant (epsilon') and dielectric loss (epsilon aEuro(3)) decrease with increasing frequency, whereas loss tangent (tan delta) remains nearly the same. The decrease in epsilon' and epsilon aEuro(3) was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity (sigma (ac)) and electric modulus (M' and MaEuro(3)) increase with increasing frequency.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.identifier.doi10.1007/s11664-017-5294-2en_US
dc.identifier.doi10.1007/s11664-017-5294-2
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic Filmen_US
dc.subjectFrequency and Voltage Dependenceen_US
dc.subjectDensity of Interface Statesen_US
dc.subjectElectrical Conductivityen_US
dc.titleFrequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diodeen_US
dc.typearticleen_US
dc.departmentMühendislik ve Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.authorid0000-0001-9563-4396en_US
dc.identifier.volume46en_US
dc.identifier.issue4en_US
dc.identifier.startpage2379en_US
dc.identifier.endpage2386en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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