Browsing Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu by Title
Now showing items 57-76 of 265
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Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
(Springer, 2018-10)Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 ... -
Erratum to: Measurement of e + e − → ωπ + π − cross section at s = 2.000 to 3.080 GeV (Journal of High Energy Physics, (2023), 2023, 1, (111), 10.1007/JHEP01(2023)111)
(Springer Science and Business Media Deutschland GmbH, 2023)The original article was published in Jan. 2023 (JHEP 01 (2023) 111), which the value of (Formula presented.) μ = (2.213 ± 0.106 ± 0.149) × 10−10 is not correct. It should be a!(Formula presented.) μ = (0.135 ± 0.007 ± ... -
Evaluation of enterprise investment attractiveness under circumstances of economic development
(SCIENDO, 2020)This article introduces a step-by-step methodology for evaluating an enterprise's investment attractiveness in the context of economic development, using appropriate valuation parameters at macro, meso and micro levels. A ... -
Evaluation of the Remainders of a Class of Series by Using Saddle Point Method
(Institute of Electrical and Electronics Engineers Inc., 2022)Remainders of various forms of series expressions of a function F(x), which arises frequently in the high frequency solutions of electromagnetic wave radiation and scattering problems, are transformed into some integrals. ... -
Evidence for the decays of Lambda(+)(C) -> Sigma(+) eta and Sigma(+) eta '
(IOP PUBLISHING LTD, 2019)We study the hadronic decays of Lambda(+)(C) to the final states Sigma(+) eta and Sigma(+) eta', using an e(+) e(-) annihilation data sample of 567 pb(-1) taken at a center-of-mass energy of 4.6 GeV with the BESIII detector ... -
Evidence of a Resonant Structure in the e(+) e(-) -> pi(+) (DD)-D-0*(-) Cross Section between 4.05 and 4.60 GeV
(Amer Physic Soc., 2019)The cross section of the process e(+) e(-) -> pi(+) (DD)-D-0*(-) for center-of-mass energies from 4.05 to 4.60 GeV is measured precisely using data samples collected with the BESIII detector operating at the BEPCII storage ... -
Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method
(Elsevier Science, 2019)HgS-PVA nanoparticles were obtained via a simple ultrasound-assisted method. The structural and morphological characteristics of the products were analyzed by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). ... -
Finansal Piyasalarda Hisse Fiyatlarının Derin Öğrenme ve Yapay Sinir Ağı Yöntemleri ile Tahmin Edilmesi; S&P 500 Endeksi Örneği
(Düzce Üniversitesi Fen Bilimleri Enstitüsü, 2021)Gelişen teknolojiler sayesinde günümüzde bilgisayarların gücü artmış ve bununla birlikte farklı amaçlara hizmet eden birçok algoritma geliştirilmiştir. Bu algoritmalar birçok alanda olduğu gibi finans alanında da sıkça ... -
First measurement of e(+)e(-) -> pK(S)(0)(n)over-barK(-) + c.c. above open charm threshold
(Amer Physical Soc., 2018)The process e(+)e(-) -> pK(S)(0)(n) over barK(-) + c.c. and its intermediate processes are studied for the first time, using data samples collected with the BESIII detector at BEPCII at center-of-mass energies of 3.773, ... -
First Measurement of Polarizations in the Decay D-0 -> omega phi
(Amer Physical Soc., 2022)Using a data sample corresponding to an integrated luminosity of 2.93 fb(-1) collected at a center-of-mass energy root s = 3.773 GeV by the BESIII detector, the decay D-0 -> omega phi is observed for the first time. The ... -
First Measurement of the Form Factors in D-s(+) -> K(0)e(+)nu(e) and D-s(+) -> K*(0)e(+)nu(e) Decays
(Amer Physic Soc., 2019)We report on new measurements of Cabibbo-suppressed semileptonic D-s(broken vertical bar) decays using 3.19 fb(-1) of e(broken vertical bar)e(-) annihilation data sample collected at a center-of-mass energy of 4.178 GeV ... -
First measurements of chi(cJ) -> Sigma(-)(Sigma)over-bar(+) (J=0,1,2) decays
(Amer Physical Soc., 2020)We measured the branching fractions of the decays chi(cJ) -> Sigma(-)(Sigma) over bar (+) for the first time using the final states n (n) over bar pi(+)pi(-). The data sample exploited here is 448.1 x 10(6) psi(3686) events ... -
First Observation of D+ -> eta mu(+)nu(mu) and Measurement of Its Decay Dynamics
(Amer Physical Soc., 2020)By analyzing a data sample corresponding to an integrated luminosity of 2.93 fb(-1) collected at a center-of-mass energy of 3.773 GeV with the BESIII detector, we measure for the first time the absolute branching fraction ... -
First Observation of the Direct Production of the chi(c1) in e(+)e(-) Annihilation
(AMER PHYSICAL SOC, 2022)We study the direct production of the J(PC) = 1(++) charmonium state chi(c1)(1P) in electron-positron annihilation by carrying out an energy scan around the mass of the chi(c1)(1P). The data were collected with the BESIII ... -
First observations of h(c )-> hadrons
(Amer Physic Soc., 2019-04-24)Based on (4.48 +/- 0.03) x 10(8) Psi(3686) events, collected with the BESIII detector at the BEPCII storage ring, five h(c) hadronic decays are searched for via the process Psi(3686) -> pi(0)h(c). Three of them, h(c) -> p ... -
A flux controlled electronically tunable fully floating OTA based memristor emulator
(Springer, 2022)In this paper, flux controlled high frequency floating/grounded type memristor emulator circuit based on single OTA (Operational Transconductance Amplifier) is introduced by using CMOS technology. The emulator is realized ... -
Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
(Springer, 2017)In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by ... -
Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
(Springer, 2019)cadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. ... -
Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer
(Springer, 2020)A film of cobalt sulfate (CoSO4)-doped polyvinylpyrrolidone (PVP) blend was spin-coated on n-Si. Electrical measurements were conducted on the Au/n-Si structure with the CoSO4-PVP film sandwiched between them. The frequency ... -
Future Physics Programme of BESIII
(IOP Publishing, 2020)There has recently been a dramatic renewal of interest in hadron spectroscopy and charm physics. This renaissance has been driven in part by the discovery of a plethora of charmonium-like XYZ states at BESIII and B factories, ...
